Flash memory is a non-volatile memory and is able to retain data for quite a period of time irrespective of whether the host device is powered on or off. 3D NAND flash memory is a type of flash memory in which the memory cells are stacked vertically one on top of each other. 3D NAND Flash memory offers a number of advantages over optical disk drive, magnetic tape and other types of memory. 3D NAND flash memory is more durable and stable in comparison to the standard 2D NND flash memory. With these key advantages, 3D NAND flash memory has a demand from numerous mobile devices such a laptops, smartphones and tablets.
3D NAND flash memory allows higher memory density thereby ensures the form factor size of 3D NAND flash memory being as less a possible. Further to this, consumer electronics manufacturers are already relying on the advent of 3D NAND flash memory so as to bring out a new range of products that are smaller in size. However, even with the advantages that 3D NAND flash memory holds, the technology is still in the nascent stages and is yet to be produced in large volumes. As such, the low production volume has made the technology inherently expensive till date. With a considerable amount of funds being invested in R&D for the 3D NAND flash memory, there could be several more application areas for this technology in the near future.
Emphasis on evolution of new technology to meet the increasing need of data resulted in the growth of the 3D NAND flash memory market. The market is witnessing huge traction due to the capability to exploit the intrinsic limits of the fabrication substrate.
The global market for 3D NAND Flash Memory can be segmented based on product into smartphones, tablets, laptops and cameras. Based on the types the market is classified into charge trap and floating rate. Based on the application the market is classified into enterprises, automotive, consumer electronics, healthcare and others. The overall market has also been presented from the perspective of different geographical locations into standard geographic regions and key economies in the market. Competitive landscape for each of the segments is highlighted and market players are profiled with attributes of company overview, financial overview, business strategies, product portfolio and recent developments.
The report contains the most detailed and in-depth segmentation of the 3D NAND Flash Memory market. The global 3D NAND Flash Memory market has been analyzed with respect to different parameters such as demand, supply and end-users.
The global 3D NAND Flash Memory market is estimated to reach $xxm in 2028 from $xxm in 2017 growing with CAGR of xx% during the forecast period. Asia-Pacific has been the leading region and is projected to continue the same during the forecast period owing to the presence of many key players and vast production in countries such as China and South Korea.
The market shares for the key players in 2017 are also provided.
Sample Companies Profiled in this Report are:
- Samsung Electronics Co., Ltd. (South Korea),
- Toshiba Corporation (Japan),
- SK Hynix Semiconductor, Inc. (South Korea),
- Micron Technology, Inc. (U.S.),
- Intel Corporation (U.S.),
- SanDisk Corporation (U.S.)